International portal Semiconductor Engineering has published an article about the new technology of accelerated cluster ions, proposed by scientists of MEPhI.

For years, chipmakers have used chemical-mechanical-polishing (CMP) tools to smooth or polish the surface of a wafer. CMP works, but the technology is time-consuming and expensive. CMP can also leave unwanted residual patterns and defects near the surface.

In response, Russia’s National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) has helped developed an accelerated cluster ion technology that could supplement or replace CMP, at least for select applications.

Specifically, researchers used the technology for the planarization of silicon carbide materials. For this, they used Exogenesis’ NanoAccel technology. Exogenesis’ technology, known as an accelerated neutral atom beam (ANAB), creates a beam of accelerated gas cluster ions. It has been used to provide “angstrom-level smoothing” of starting materials with a Ra of <500nm, according to Exogenesis.

a) AFM of the surface of 6H-SiC before planarization	b) after radiation by ion-cluster beam

With this technology, researchers looked at the impact of ion-cluster radiation on the topology of 6Н-SiC crystals. Argon clusters were ionized and accelerated by the pressure of 30 KeV. The results show a smoothing of the 6H-SiC surface. The Rq parameter is lowered 1.5 to 2 times, according to researchers.

Source: semiengineering.com.