Scientists of MEPhI Institute of functional nuclear electronics have worked out a technological process of making monolithic integral circuits of low-noise amplifier and intermediate power amplifier which corresponds to the requirements of the development of modern electronics – miniaturization, minimum energy consumption and maximum reliability.

The absence of mass-production of such microsystems in Russia has served as the background for creation of such technology, that is why Russian manufacturers work with foreign products or Russian microcircuits, which are not as good as foreign ones in reliability, size and speed. The unique technology offered by MEPhI specialists will become the basis for getting competitive multifunctional integrated radioelectronic devices of new generation on the basis of high-density electronic modules which will be able to effectively replace foreign analogues.

At the first stage MEPhI scientists have worked out the technology of making MNEMT heterostructures InAlAs/InGaAs/InAlAs by the method of molecular-beam-epitaxy at base surfaces of gallium arsenide in the diameter of 2 and 3 inches by metamorphic technology, the contents of InAs in active layers was 37 %.

These heterostructures have become the basic material for creation of low-noise SHF amplifiers of intermediate power at the frequencies of the range of 40 GHz. For the growth of heterostructures Riber Compact 21 T molecular-beam-epitaxy device was used. As the result of conducted work parametres of MNEMT heterostructures, which correspond to the best world analogues, were reached.

At the second stage scientists of the Institute of functional nuclear electronics have worked out a planar technology of making a monolithic integrated circuit of amplifiers for SHF of transmitting-receiving high-density electronic module at blades of 2 and 3 inches, with the usage of contact photolithography, under forming of mesa, ohmic metallization, mask opening in dielectric and clipping path of galvanic metallisation. The picture shows the topology of developed small-scale integrated circuit of low-noise amplifier.

Fig. The topology of small-scale integrated circuit of low-noise amplifier

Employees of JSC «MRTI RAS» have taken part in working under the project as co-executives. They have conducted works on making of basis and assembly of SHF of transmitting-receiving high-density electronic module with the usage of component small-scale integrated circuits made in MEPhI.

According to the words of one of the project’s executives, employee of the Institute of functional nuclear electronics S.M. Ryndia, the offered technological process of making of SHF of transmitting-receiving high-density electronic module is perspective and fulfils requirements of modern electronics.