The international expert jury has evaluated the development of a team of scientists and specialists of MEPhI Institute of Nanotechnologies in electronics, spintronics and photonics with the gold medal of the XX International Salon of Inventions and Innovative Technologies "Archimedes-2017".

Anniversary salon "Archimedes" was held with the support of the Administration of the President of the Russian Federation, the Government of Moscow, the Ministry of Defense of the Russian Federation, the Chamber of Commerce and Industry of the Russian Federation, the World Intellectual Property Organization, the International Federation of Inventors' Associations, the All-Russian Society of Inventors and Innovators.

This year, the largest world forum, aimed at activating inventive, patent-licensing and innovation activities gathered on one platform representatives from 20 states and 50 regions of the Russian Federation. The best inventors of the world have demonstrated about a thousand different promising technologies.

MEPhI presented "Powerful super high-frequency transistor based on gallium nitride" (Patent of the Russian Federation №2581726). The development is intended for use in radio communication devices, power engineering, on-board equipment of space vehicles, as well as objects with a high level of radiation.

To solve the problem of increasing the power of the transistor, a heat-spreading layer is proposed on the working surface of the device, which makes it possible to significantly reduce the temperature in the channel of the device and thereby improve its functional characteristics.

Schematic profile of a transistor with a heat distribution layer

The problem of the influence of the thermal distribution layer on the temperature and current-voltage characteristics of nitride-gallium transistors with high electron mobility was solved. The mechanism of the appearance of peaks of the electron and lattice temperatures, the so-called "peak", was studied.

The invention was created within the framework of the international project MEPhI-BSUIR devoted to the development of heat removal technology, which is released when microwave semiconductor devices based on gallium nitride are used.

The results of the research were presented at scientific sessions, international scientific and practical conferences and exhibitions and published in three scientific journals indexed in international databases "Web of Science" and "Scopus".